Webinar : Analysis of advanced semiconductor devices at low kV

Webinar registration

Date : Friday 9 October 2026
Time : 4am | 2am AEDT | 11pm AWST (Thurs 8 Oct)

As semiconductor devices advance beyond the 5 nm node, characterisation techniques must deliver strong analytical performance while keeping electron dose to a minimum. Although lower accelerating voltages enhance analytical sensitivity, they also increase the likelihood of beam-induced damage.

Join this webinar to discover how the F1-GIF System combines single-electron counting with monolithic active pixel sensor (MAPS) technology to enable dose-efficient, low-kV EELS acquisition across a wide energy range without compromising energy resolution. Its large-format sensor redefines EELS analysis by supporting rapid multi-pass dose fractionation without introducing read noise, reducing sample damage while preserving spatial resolution through continuous drift correction.

Using a commercial gate-all-around (GAA) device as an example, we will demonstrate a multimodal characterization approach that integrates EELS spectrum imaging and filtered 4D STEM to correlate chemical, structural, and strain-related information.

Please register to receive a recording of the webinar after the event.